Resistive switching and optical properties of strontium ferrate titanate thin film prepared via chemical solution deposition

Abstract The polycrystalline strontium ferrate titanate (SrFe 0.1 Ti 0.9 O 3 , SFTO) thin films have been successfully prepared by chemical solution method. By analyzing the current-voltage ( I–V ) characteristics, we discuss conduction mechanism of SFTO. It is found that number oxygen vacancy defects increased Fe ion doping, making SFTO be with better resistive switching property. doping can also enhance absorption to exposed visible light, which associated change energy band. band gap width (2.84 eV) figured out, less than pure titanate. Due more caused was reduced slightly. defect types determined electron paramagnetic resonance spectroscopy. In addition, analyzed and state density first-principles calculation based on functional theory, reduce micro-regulation structure. A X-ray photo At same time, structure morphology were characterized diffraction scanning microscope. This study deepens further understanding influence properties titanate, expected a film material for memristor devices.